Morphological characterization of porous n-GaP made by electrochemical etching

Morphological characterization of porous n-GaP made by electrochemical etching

Professor    7525 7527 7011    n5888107@mail.npust.edu.tw
Year2009
AuthorY. C. Shen, 張莉毓*, M. H. Hon, D. L. Chiang
Author count4
Created date2019-02-19
Author order2
Corresponding authorfalse
Publication year2009
Symposium name11th Japan International SAMPE Symposium & Exhibition
Publication country中華民國
Start date2009-11-25
End date2009-11-25
Review system
LanguageForeign Language