Microstructure and electrical property of tantalum oxynitride thin films preparedusing high-power impulse reactive magnetron sputtering

Microstructure and electrical property of tantalum oxynitride thin films preparedusing high-power impulse reactive magnetron sputtering

Year2020
Author李英杰*
Author count1
Created date2021-03-24
Author order第三作者
Corresponding author
Publication year2020
Publication month10
Journal nameJapanese Journal of Applied Physics,
Publication area日本
Volume59
Issue11
Start page11650
End page11650
Publication type
Review system
LanguageTraditional Chinese